1. 平台首页
  2. 国际专利信息
  • 专利标题:   Semiconductor material comprises polymer substrate, radiating composite material, wear-resistant antistatic composite material, conductive material, first additive, filler, cross-linking agent and organic solvent.
  • 专利号:   CN113683889-A
  • 发明人:   ZHAO N, LIU L, WEI S, ZHAO Y
  • 专利权人:   SHENZHEN DONGYING ADVANCED MATERIALS CO LTD
  • 国际专利分类:   C08K003/02, C08K003/04, C08K003/08, C08K003/22, C08K003/28, C08K003/40, C08K009/02, C08L015/00, C08L023/06, C08L023/08, C08L023/16, C08L027/16, C08L079/02, C08L083/04, C08L009/00, C08L009/06
  • 专利详细信息:   CN113683889-A 23 Nov 2021 C08L-083/04 202224 Chinese
  • 申请详细信息:   CN113683889-A CN11023097 01 Sep 2021
  • 优先权号:   CN11023097

▎ 摘　　要

NOVELTY - Semiconductor material comprises 100 pts. wt. polymer substrate, 5-15 pts. wt. radiating composite material, 2-6 pts. wt. wear-resistant antistatic composite material, 1-20 pts. wt. conductive material, 8-15 pts. wt. first additive, 2-15 pts. wt. filler, 1-5 pts. wt. cross-linking agent and 250-400 pts. wt. organic solvent. USE - The material is used for transmission based on the 5 G signal (claimed). ADVANTAGE - The semiconductor material improves the heat dissipation, puncture resistance and antistatic performance of the semiconductor through the combination of heat dissipation materials.