▎ 摘　　要

NOVELTY - The photoelectric conversion element (10) has a p type semiconductor (1) and n type semiconductor (2) that are joined through graphene nano ribbon (3) which has an armchair-type edge portion. The graphene nano ribbon is placed multiply parallelly between the p type semiconductor and the n type semiconductor. The graphene nano ribbon is equipped with an exciton dissociation site which dissociates the formed exciton. USE - Photoelectric conversion element for solar cell and photosensor (all claimed). ADVANTAGE - The graphene nano ribbon is lightweight and flexible, and the photoelectric conversion efficiency of the photoelectric conversion element is improved. DETAILED DESCRIPTION - The graphene nano ribbon is provided with a leading-element is formed in the joining direction of the p type semiconductor and the n type semiconductor, and a branching portion is branched from the leading-element. The width of each branching portion is constant. The leading-element is configured to provide the exciton dissociation site which dissociates the formed exciton. The atomic-layer insulator is joined to the graphene nano ribbon in which p type semiconductor and n type semiconductor have an armchair-type edge portion through a laminated housing laminated multiply alternately. The laminated graphene nano ribbon is provided with branching portion, and the width of the branching portion differs for every layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photoelectric conversion element. P type semiconductor (1) N type semiconductor (2) Graphene nano ribbon (3) Photoelectric conversion element (10)