• 专利标题:   Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.
  • 专利号:   GB2605211-A, TW202248121-A
  • 发明人:   GRIFFIN R M, THOMAS S, GUINEY I, DIXON S
  • 专利权人:   PARAGRAF LTD
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/455, C30B025/18, C30B029/02, H01L021/02
  • 专利详细信息:   GB2605211-A 28 Sep 2022 C23C-016/26 202286 English
  • 申请详细信息:   GB2605211-A GB010027 12 Jul 2021
  • 优先权号:   GB004140, GB006149, GB007209, GB010027

▎ 摘  要

NOVELTY - The method of forming a graphene layer structure involves: providing a growth substrate having a growth surface; and forming a graphene layer structure on the growth surface by chemical vapor deposition method at 700-1350 °C, preferably 1000-1250 °C. The growth surface is formed of a material consisting of yttria stabilized zirconia, magnesium aluminate or yttrium-aluminum oxide. The growth substrate further comprises a support layer comprising sapphire or silicon. USE - Method of forming a graphene layer structure used in an electrical device (claimed) such as Hall effect sensor. ADVANTAGE - The method is more reliable and more efficient for the industrial manufacture of the high quality graphene, preferably large area graphene on non-metallic substrate and improves the electronic properties such as improved mobility, sheet resistance and Hall sensitivity of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the graphene substrate.