▎ 摘　　要

NOVELTY - The method of forming a graphene layer structure involves: providing a growth substrate having a growth surface; and forming a graphene layer structure on the growth surface by chemical vapor deposition method at 700-1350 °C, preferably 1000-1250 °C. The growth surface is formed of a material consisting of yttria stabilized zirconia, magnesium aluminate or yttrium-aluminum oxide. The growth substrate further comprises a support layer comprising sapphire or silicon. USE - Method of forming a graphene layer structure used in an electrical device (claimed) such as Hall effect sensor. ADVANTAGE - The method is more reliable and more efficient for the industrial manufacture of the high quality graphene, preferably large area graphene on non-metallic substrate and improves the electronic properties such as improved mobility, sheet resistance and Hall sensitivity of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the graphene substrate.