▎ 摘　　要

NOVELTY - The method involves forming a preset indium-tin-oxide (ITO) area in a semiconductor structure. A surface of the structure is formed with an indium-tin-oxide layer that is pre-heated to coat a graphene oxide film on a surface of the indium-tin-oxide layer. An indium-tin-oxide thin film layer is formed on the surface of the structure. A photoresist cover is covered on a surface of the thin film layer. Thin film layer exposing and developing processes are performed after completing photoresist process. Indium-tin-oxide layer preparing process is performed by utilizing oxygen plasma and UV ozone. USE - Method for improving injection efficiency of an indium-tin-oxide layer hole in an anode structure of a display device (claimed). ADVANTAGE - The method enables improving injection efficiency of an indium-tin-oxide layer hole in an anode structure of a display device in an effective manner and reducing driving voltage. The method enables improving stability and utilization rate of the display device. The method enables forming a graphene oxide layer on the indium-tin-oxide layer so as to improve indium-tin-oxide layer working efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an anode structure for a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for improving injection efficiency of an indium-tin-oxide layer hole in an anode structure of a display device.'(Drawing includes non-English language text)'