• 专利标题:   Transparent electrode used in photoelectric conversion element, comprises patterned electrode layer provided on transparent base material, and electrode layer having electroconductive film comprising metal nanowires, and protective film.
  • 专利号:   WO2021176518-A1, CN113826230-A, JP2021549638-X, US2022209151-A1, JP7249430-B2
  • 发明人:   NAOMI S, KATSUYUKI N, YUTAKA S, SAITA Y, NAITO K, SHINODA N, SHIDA N
  • 专利权人:   TOSHIBA KK, TOSHIBA ENERGY SYSTEMS SOLUTIONS CORP, TOSHIBA ENERGY SYSTEMS SOLUTIONS CORP, TOSHIBA CORP, TOSHIBA KK, TOSHIBA ENERGY SYSTEMS SOLUTIONS CORP, TOSHIBA KK
  • 国际专利分类:   H01B013/00, H01B005/14, H01L051/44, H01L051/50, H05B033/28, G03F007/023, G03F007/039, G03F007/20, G03F007/32, H01L051/00, H01L051/52, H01L051/56, H05B033/02, H05B033/10, H05B033/22, H05B033/26, H10K030/30, H10K030/50, H10K030/82, H10K050/00, H10K050/805, H10K085/20
  • 专利详细信息:   WO2021176518-A1 10 Sep 2021 H01L-051/44 202180 Pages: 31 Japanese
  • 申请详细信息:   WO2021176518-A1 WOJP008695 02 Mar 2020
  • 优先权号:   CN80017539, JP549638, WOJP008695, CN80017539, US469723

▎ 摘  要

NOVELTY - A transparent electrode (100) comprises a patterned electrode layer provided on a transparent base material (101), and an electrode layer having an electroconductive film (102a) comprising metal nanowires, and a protective film comprising N-graphene (102b) comprising a portion of the graphene carbon skeleton substituted with a nitrogen atom, laminated on the metal nanowires. USE - Transparent electrode used in photoelectric conversion element e.g. solar cell, and organic electroluminescent element (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of the transparent electrode, which involves (A) applying a dispersion liquid comprising metal nanowires on a transparent base material and drying to form a electroconductive film, (B) forming an N-graphene film on the electroconductive film, (C) forming a photoresist film on the N-graphene film, (D) irradiating the photoresist film with light and developing the photoresist film to form a photoresist pattern, (E) etching the non-masked portion using the pattern as a mask to remove the N-graphene film and the electroconductive directly under the non-masked portion, and (F) removing pattern of photoresist; and (2) photoelectric conversion element, which comprises the transparent electrode, a photoelectric converting layer, and a counter electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of the transparent electrode. Transparent electrode (100) Transparent base material (101) Electrode layer (102) Electroconductive film (102a) N-graphene film (102b)