• 专利标题:   Copper film catalyst for chemical vapor deposition growth of graphene thin film material, comprises hydrophobically surface treated quartz sheet as base material, and copper film formed on surface of base material.
  • 专利号:   CN112916004-A, CN112916004-B
  • 发明人:   YU Y, SUN F, FENG A, CHEN B, MI L, SONG L
  • 专利权人:   SHANGHAI INST CERAMICS CHINESE ACAD SCI
  • 国际专利分类:   B01J023/72, B01J035/02, C01B032/186
  • 专利详细信息:   CN112916004-A 08 Jun 2021 B01J-023/72 202163 Pages: 10 Chinese
  • 申请详细信息:   CN112916004-A CN11242745 06 Dec 2019
  • 优先权号:   CN11242745

▎ 摘  要

NOVELTY - A copper film catalyst comprises a hydrophobically surface treated quartz sheet as base material, and a copper film formed on the surface of the base material. USE - Copper film catalyst is used for chemical vapor deposition growth of graphene thin film material (all claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for growing graphene thin film material by chemical vapor deposition, which involves placing the copper film catalyst in an inert atmosphere, heating for 5-30 minutes at 1084-1100 degrees C, introducing methane carbon source as precursor, maintaining a constant temperature, starting graphene growth, and etching.