▎ 摘　　要

NOVELTY - Process for heteroatom doping in graphene, involves preparing a mixture of graphene and a doping precursor in a weight ratio of (0.5-1):(0.4-1.5) in a solvent, ultrasonically processing the mixture to obtain a dispersed solution, and subjecting the dispersed solution to microwave radiation for 10 seconds to 2 minutes for 8-20 times to obtain one or more layers of heteroatom doped graphene. USE - The process is useful for heteroatom doping in graphene used for electrochemical cell. ADVANTAGE - The process provides faster, economical and easy doping of graphene with elements such as nitrogen, boron, phosphorous, sulphur, aluminum, and simultaneous (co-doping) with an appropriate combination of elements, and is pre-dominantly electric field driven unlike conventional doping which is purely a thermally driven diffusion process, and does not involve any catalyst and does not have any toxic by-products, and is scalable and reproducible. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a heteroatom doped graphene material comprising elemental nitrogen, elemental boron or a combination of nitrogen-boron resulting in three stable phases of boron carbon nitride, B5C73N22, B8C76N16, or B10C77N13; a process for preparation of an anode, involving preparing a slurry of the graphene material, a binder and a conducting material, coating the slurry on a metal foil, and drying the coated foil; and an electrochemical cell comprising an anode comprising the heteroatom doped graphene material, a cathode comprising alkali metal or their alloy, a separator comprising polypropylene carbonate film, glass fiber or their combination, and an electrolyte.