▎ 摘　　要

NOVELTY - The preparation method of graphene dendritic crystal involves (1) cleaning an insulating substrate, and blowing to dry, (2) placing the dried substrate in a chemical vapor deposition (CVD) tubular furnace, vacuumizing the tubular furnace, increasing the temperature to 200-300 degrees C, introducing hydrogen, and etching the substrate surface at a constant temperature when the temperature is increased to 800-900 degrees C, (3) slowly increasing the temperature after hydrogen etching, increasing the temperature to 1050-1080 degrees C, and introducing carbon source and hydrogen at constant temperature for graphene growth, and (4) stopping the gas after the growth is completed, cooling to 700-800 degrees C, and naturally cooling to room temperature. USE - Preparation method of graphene dendritic crystal on insulating substrate for preparing microelectronic device (all claimed). ADVANTAGE - The method enables preparation of graphene dendritic crystal with excellent mechanical and electrical performance.