▎ 摘　　要

NOVELTY - The stacked structure is provided with a single crystal graphene layer (1), a boron nitride layer (2), a single crystal boron nitride layer (3), and silicon dioxide wafer substrate (4). The dry oxidation process is performed to form a silicon dioxide thin film by heating the sodium borohydride to a specific degree centigrade. The anhydrous tetrahydrofuran is dissolved to obtain the poly-boron silazane precursor. USE - Large-size stacked structure of graphene wafer used in silicon-based semiconductor device and graphene-based electronic device. ADVANTAGE - The environment-friendly graphene wafer can be realized. The performance of the graphene-based electronic device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for preparing graphene wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the stacked structure of graphene wafer. Single crystal graphene layer (1) Boron nitride layer (2) Single crystal boron nitride buffer layer (3) Wafer substrate (4)