▎ 摘　　要

NOVELTY - Preparation of load nitrogen-doped graphene on silicon chip involves dissolving graphene powder in mixed solution of ethanol and dimethyl formamide, ultrasonicating for 15-30 minutes, magnetic stirring, mixing, and dispersing to obtain graphene dispersion liquid; cleaning silicon chip substrate with acetone, methanol or isopropanol for 5 minutes, removing surface oil stain, and drying; carrying out spin coating graphene dispersion at normal temperature and pressure, and coating graphene dispersion liquid on cleaned silicon substrate; and preparing nitrogen-doped graphene, and coating. USE - Method for preparing load nitrogen-doped graphene on silicon chip (claimed). DETAILED DESCRIPTION - Preparation of load nitrogen-doped graphene on silicon chip comprises dissolving graphene powder in mixed solution of ethanol and dimethyl formamide, ultrasonicating for 15-30 minutes, magnetic stirring, mixing, and dispersing to obtain graphene dispersion liquid; cleaning silicon chip substrate with acetone, methanol or isopropanol for 5 minutes, removing surface oil stain, and drying; carrying out spin coating graphene dispersion at normal temperature and pressure, and coating graphene dispersion liquid on cleaned silicon substrate; and preparing nitrogen-doped graphene, coating with graphene dispersion with nitrogen of silicon chip, annealing into annealing furnace at 300-500 degrees C for 1-6 hours, naturally cooling in annealing furnace, and taking out.