▎ 摘　　要

NOVELTY - The method involves providing a modulated gate bias signal to a gate (104) of a graphene hall sensor (GHS) (100), in which modulated gate bias signal alternates at modulation frequency between first voltage and second voltage. Bias current is provided through a first axis of the GHS. A resultant output voltage signal is obtained across a second axis of the GHS sensor that includes modulated Hall voltage and offset voltage, in which the Hall voltage is modulated at the modulation frequency. Amplitude of the Hall voltage that does not include the offset voltage is extracted. USE - Method for operating a graphene Hall sensor in a Hall Effect sensor system (claimed). ADVANTAGE - The method enables reducing offset typical in a GHS to modulate gate with high frequency control voltage such that the Hall output voltage is modulated with the high frequency but the offset stays at DC. The method allows the gate to be used to modulate a channel region without affecting contact resistance of contact regions. The method enables providing a conditioned signal to provide accurate representation of strength of magnetic field that is penetrating the GHS. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a Hall Effect sensor system. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a GHS device. GHS (100) Graphene layer (102) Gate (104) Contact region (106) Hall effect voltage (114)