▎ 摘　　要

NOVELTY - The utility model claims a patch type infrared anti-static light emitting diode, comprising a substrate, a light emitting chip; a packaging colloid and a graphene fabric layer; the middle of the substrate upper end provided with a packaging colloid; the inner part of the packaging colloid is provided with a mounting cavity; the inner wall of the packaging colloid is provided with a graphene material layer; the inner part of the mounting cavity is provided with a light emitting chip; the lower side of the light emitting chip is provided with a PCB circuit layer; compared with the existing technology; The utility model has the following beneficial effects: simple structure, convenient use, with far infrared, anti-ultraviolet, antistatic function.