▎ 摘　　要

NOVELTY - The transistor has an electric charge provided with a magnetic particle (1000). The magnetic particle is provided with a Piezo material. An obstacle regulating circuit is arranged in a lower end portion of a graphene (200). A middle part of the graphene is crossed with the magnetic particle. The electric charge controls work function of the graphene to control height of Fermi level over and work function over. A schottky obstacle (DD) is connected with the electric charge. The graphene is arranged in an upper end portion of a layer. USE - Transistor. ADVANTAGE - The transistor improves hundredfold emergency processing speed by selecting bending of the graphene with stand-by power problem, so that height of schottky obstacle and height of Fermi level can be controlled in an effective manner. DETAILED DESCRIPTION - The layer is selected from bonding layer, liquid polymer layer, elastomer layer, nonconductor layer, insulating layer, vacuum layer, air layer or middle layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a transistor. '(Drawing includes non-English language text)' High schottky obstacle (BB) Schottky obstacle (DD) Low schottky obstacle (FF) Graphene (200) Silicone (300, 500) Magnetic particle (1000)