• 专利标题:   Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.
  • 专利号:   US2011121264-A1, JP2011110694-A, KR2011057989-A
  • 发明人:   CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATION
  • 国际专利分类:   H01B001/04, H01L021/20, H01L029/15, B82B001/00, B82B003/00, C01B031/04
  • 专利详细信息:   US2011121264-A1 26 May 2011 H01L-029/15 201135 Pages: 11 English
  • 申请详细信息:   US2011121264-A1 US765930 23 Apr 2010
  • 优先权号:   KR114637

▎ 摘  要

NOVELTY - The composite structure (400) comprises a first graphene (421), a second graphene (422) separated apart from the first graphene, an one-dimensional nanostructure (410) disposed between the first graphene and the second graphene, and a substrate on which the graphenes is disposed. The nanostructure: is electrically connected to the first and second graphenes; is disposed perpendicularly to and/or disposed inclined with respect to the first and second graphenes; consists of nanowires, nanotubes and/or nanorods; and comprises a material consisting of a IV group semiconductor. USE - The composite structure is useful in a logic device, a memory device, a supercapacitor, a sensor, an optical device, an energy storage device, flexible and stretchable device, a transparent display device or other similar applications. ADVANTAGE - The composite structure has high flexibility, improved electrical and thermal conductivity, enhanced mechanical strength and excellent elastic characteristics. DETAILED DESCRIPTION - The composite structure (400) comprises a first graphene (421), a second graphene (422) separated apart from the first graphene, an one-dimensional nanostructure (410) disposed between the first graphene and the second graphene, and a substrate on which the graphenes is disposed. The nanostructure: is electrically connected to the first and second graphenes; is disposed perpendicularly to and/or disposed inclined with respect to the first and second graphenes; consists of nanowires, nanotubes and/or nanorods; comprises a material consisting of a IV group semiconductor, a III-V group semiconductor, a II-VI semiconductor, a IV-VI semiconductor, a IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor and/or a metal; has a heterostructure in a radius direction and/or a heterostructure in a length direction; and is doped with a conductive impurity. An insulating material is filled between the first graphene and the second graphene in spaces left between the nanostructures. An INDEPENDENT CLAIM is included for a method of manufacturing a composite structure. DESCRIPTION OF DRAWING(S) - The diagram shows a front perspective view of a composite structure. Composite structure (400) Nanostructures (410) First graphene (421) Second graphene. (422)