• 专利标题:   Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.
  • 专利号:   CN104498892-A
  • 发明人:   GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D
  • 专利权人:   CHONGQING MOXI TECHNOLOGY CO LTD, CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C01B031/04, C23C016/02, C23C016/26
  • 专利详细信息:   CN104498892-A 08 Apr 2015 C23C-016/26 201551 Pages: 10 Chinese
  • 申请详细信息:   CN104498892-A CN10768777 12 Dec 2014
  • 优先权号:   CN10768777

▎ 摘  要

NOVELTY - Preparing a graphene film through low-temperature fixed-point nucleating comprises (i) coating a layer of carbon source solution on a metal substrate and drying till the carbon source solution is cured, (ii) patterning the cured carbon source solution on the surface of the metal substrate to form multiple solid-state carbon sources, (iii) placing the whole metal substrate into a chemical vapor deposition reaction cavity and carrying out graphene nucleating, (iv) diffusing the carbon atoms to the whole metal substrate to form a graphene film, and (v) cooling the formed graphene film. USE - The method is useful for preparing a graphene film through low-temperature fixed-point nucleating (claimed). ADVANTAGE - The method is simple, has convenient operation, and reduces energy consumption. DETAILED DESCRIPTION - Preparing a graphene film through low-temperature fixed-point nucleating comprises (i) coating a layer of carbon source solution on a metal substrate and drying till the carbon source solution is cured, (ii) patterning the cured carbon source solution on the surface of the metal substrate to form multiple solid-state carbon sources, (iii) placing the whole metal substrate into a chemical vapor deposition reaction cavity and carrying out graphene nucleating so that the carbon atoms of the solid-state carbon sources are recombined and subjected to fixed-point nucleating, (iv) diffusing the carbon atoms to the whole metal substrate to form a graphene film, and (v) cooling the formed graphene film.