▎ 摘　　要

NOVELTY - Preparation of aluminum gallium nitride UV-detector with graphene electrode on gallium nitride self-supporting substrate involves preparing gallium nitride self-supporting substrate by hydride chemical vapor deposition, depositing aluminum gallium nitride layer of N-type heavily doped high aluminum component on front surface of gallium nitride self-supporting substrate by organic chemical vapor deposition, doping, and forming ohmic contact back electrode by electron beam evaporation on back surface of structure; and preparing graphene Schottky contact on aluminum gallium nitride layer. USE - Method for preparing aluminum gallium nitride UV-detector with graphene electrode on gallium nitride self-supporting substrate (claimed). ADVANTAGE - The detector has high resistivity. It improves UV-light transmittance and solar-blind UV-detector performance. DETAILED DESCRIPTION - Preparation of aluminum gallium nitride UV-detector with graphene electrode on gallium nitride self-supporting substrate comprises preparing gallium nitride self-supporting substrate by hydride chemical vapor deposition, depositing aluminum gallium nitride layer of N-type heavily doped high aluminum component on front surface of gallium nitride self-supporting substrate by organic chemical vapor deposition, doping, and forming ohmic contact back electrode by electron beam evaporation on back surface of structure; preparing graphene Schottky contact on aluminum gallium nitride layer, and preparing circular pattern; and depositing passivation layer at top of entire structure, etching portion of passivation layer to graphene Schottky contact surface, and extending metal contact.