▎ 摘　　要

NOVELTY - Preparing copper-doped multilayer graphene involves taking graphite target and copper target as raw materials, and introducing into a carbon matrix by co-sputtering by direct current and radio frequency in magnetron sputtering. The copper element effectively improves structure and energy level of multilayer graphene. The copper target is placed on radio frequency and placed graphite target on direct current. The vacuum pressure of chamber is pumped to below 10-3Pa, argon gas is introduced, and the argon pressure is 10-0.1Pa. The RF power is adjusted to 20-30W, DC power is adjusted to 100-150W, and co-sputtering is performed for 30 minutes to obtain final product. USE - Method for preparing copper-doped multilayer graphene. ADVANTAGE - The method enables to prepare copper-doped multilayer graphene is easy to obtain raw material, more diverse electronic transition mode, has non-toxic graphite target, improves structure, and effectively changes its optical properties used for detector, light emitting diode, solar battery, super-capacitor, a lithium ion battery, and fluorescent material.