▎ 摘　　要

NOVELTY - Production of magnetic graphene nanobelt/graphene composite thin film involves dispersing graphene nanobelt in surfactant solution, loading graphene nanobelt in the mixed solution on a metal foil, depositing graphene, placing a metal foil in a constant temperature region of furnace, introducing hydrogen, heating, introducing methane, heating, cooling, loading nano-metal oxide on resultant metal foil, placing the metal foil in the constant temperature region, heating, introducing hydrogen, carbon source and gaseous water mixed gas, heating, cooling, and etching resultant metal foil. USE - Production of magnetic graphene nanobelt/graphene composite thin film used in graphene spintronic device, electromagnetic wave absorbing material and flexible graphene thin-film electronic device. ADVANTAGE - The method enables economical production of magnetic graphene nanobelt/graphene composite thin film with high productivity, optical transparency, hole/electron mobility and strength, by simple process. DETAILED DESCRIPTION - Production of magnetic graphene nanobelt/graphene composite thin film involves adding predetermined amount of surfactant to water, uniformly mixing, obtaining solution (A) having surfactant concentration of 0.001-0.01 mol/L, adding predetermined amount of graphene nanobelt to the solution (A), ultrasonically dispersing at 30-100 W for 0.1-1 hour, obtaining mixed solution (B) having graphene nanobelt concentration of 0.01-0.1 mol/L, uniformly loading graphene nanobelt in the mixed solution (B) on the metal foil, depositing graphene by chemical vapor deposition (CVD) in an inert atmosphere, placing a metal foil (C) in a constant temperature region of the CVD furnace, introducing hydrogen, heating the furnace to 900-1100 degrees C for 10-30 minutes, such that the metal foil (C) is thermally reduced, introducing methane, heating at 900-1100 degrees C for 0.1-1 hour, rapidly removing the metal foil from the constant temperature region of the CVD furnace, cooling to room temperature, obtaining metal foil (C1) having graphene/graphene nanobelt film, dispersing predetermined amount of nano-metal oxide having average particle diameter of 10-50 nm in a dispersant, obtaining solution (D), loading nano-metal oxide in solution (D) on the metal foil (C1), obtaining nano-metal oxide-loaded metal foil (C2), placing the metal foil (C2) in the constant temperature region of the CVD furnace, heating to 750-850 degrees C, introducing hydrogen, carbon source and gaseous water mixed gas, heating for 0.1-0.5 hour, cooling the metal foil to room temperature, removing the metal foil (C3) from the furnace, uniformly mixing of ammonium thiosulfate and n-butanol with water, obtaining etching solution, placing the metal foil (C3) horizontally upwardly in the etching solution, etching for 5-12 hours, such that the metal foil (C3) is etched, and washing remaining film with an aqueous solution of n-butanol. The content ratio of n-butanol and water in n-butanol aqueous solution is 1 ml:100 ml. The loading amount of graphene nanobelt on the metal foil is 0.1-10 mg/cm2. The gas flow ratio of hydrogen and methane is 20/1-200/1. The gas flow ratio of hydrogen and carbon gas source is 20/1-700/1. The gas flow ratio of gaseous water and carbon gas is 100/1-600/1. The content ratio of ammonium thiosulfate, n-butanol and water is 1 g:1-10 ml:100-1000 ml.