▎ 摘　　要

NOVELTY - The field emission device has an emitter (30a) that comprises a cathode electrode (10a) and an electron emission source (20a) that is supported by the cathode electrode. An insulating spacer is provided around the emitter, and configured to form an opening that is a path of electrons emitted from the electron emission source. A gate electrode is provided around the opening. The electron emission source comprises multiple graphene thin films (21A) that are vertically supported in the cathode electrode toward the opening. The first portion is buried in the cathode electrode. USE - Field emission device for use in electronic apparatus such as lighting apparatus, X-ray generator, field emission display, and back light unit of display device such as LCD. ADVANTAGE - The field emission device efficiently generates a large number of electrons under a relatively low gate voltage. The electric field strengthening effect increases, when the aspect ratio of the electron emission source is larger, and thus concentration of an electric field concentrated on the electron emission source is increased and the density of electrons are increased. Since excellent electrical and thermal interface characteristics between the graphene thin films and the cathode electrode is obtained, and the degradation of field emission efficiency due to electrical and thermal factors are prevented. Since the structure of device, the electric field strengthening effect is maximized, and the field emission efficiency is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an emitter. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the emitter. Cathode electrode (10a) Electron emission source (20a) Graphene thin film (21a) Portions of device (22,23) Emitter (30a)