• 专利标题:   Manufacture of semiconductor device for electronic device, involves forming carbon buffer layer on substrate, and graphene layer on buffer layer, removing graphene layer, exposing carbon buffer layer, and forming fabrication platform.
  • 专利号:   WO2020081623-A1
  • 发明人:   KIM J, KONG W
  • 专利权人:   MASSACHUSETTS INST TECHNOLOGY
  • 国际专利分类:   B32B037/26, B32B009/04, H01L021/02
  • 专利详细信息:   WO2020081623-A1 23 Apr 2020 B32B-037/26 202037 Pages: 23 English
  • 申请详细信息:   WO2020081623-A1 WOUS056428 16 Oct 2019
  • 优先权号:   US746072P

▎ 摘  要

NOVELTY - Manufacture (100) of semiconductor device involves forming a carbon buffer layer on a substrate (110) and a graphene layer on the carbon buffer layer, and removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform. USE - Manufacture of semiconductor device (claimed). Uses include but are not limited to rack-mounted computer, desktop computer, laptop computer, speakers, display screens for visual presentation of output, computer memory, floppy disc, compact disc, optical disc, magnetic tape, flash memories, and tablet computer. ADVANTAGE - The method is economical by reusing the substrate, refurbishing the minimal substrate after releasing layer, fast releasing rate, transferring the released group (III)-N-semiconductor to the substrate, and controlling of release thickness. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating method of fabricating semiconductor device. Fabricating method (100) Substrate (110) Surface (115)