▎ 摘　　要

NOVELTY - A method for preparing single-crystal graphene, comprising a vacuum pump, an air inlet, an outer cavity, a heating device, an air outlet, a cavity and an exhaust pipe, wherein the inner cavity is set in the middle cavity, a heating device is located on the cavity, and close in the inner cavity position, two ends of the cavity are respectively provided with an air inlet and an air outlet, the air outlet is connected with one end of the exhaust pipe, the exhaust pipe is connected with a vacuum pump, the inner cavity of the frame is close to one end of the gas inlet is sealed, and the other end is open, the inner cavity and the outer cavity is a hollow cylindrical or square cavity. The device using a CVD technique capable of preparing the single crystal graphene is high quality in the copper, platinum and other metals. This utility model not only has simple structure, convenient use, a good quality single crystal graphene, the size and the layer number of the graphene is easy to control, can prepare the metal surface with large size, low cost, the electron mobility is high, the symmetric property of the single crystal;