▎ 摘　　要

NOVELTY - The nonvolatile memory device has a channel layer (315) that is extended in a first direction. Several gate electrodes (312) and several spacers each extends in a second direction crossing the first direction. Several gate electrodes and several spacers are alternately arranged with each other in the first direction. A gate insulating layer (320) is extended in the first direction between the channel layer and several gate electrodes. Several gate electrodes includes a metal-doped graphene. The metal-doped graphene includes a metal particle. The metal particle includes ruthenium, aluminum, titanium, platinum, tantalum, rhodium, infrared spectroscopy and carbon monoxide. USE - Nonvolatile memory device for neuromorphic apparatus (claimed). Can also be used in cellular phone, a digital camera, a portable digital assistant (PDA), a mobile computer device and a stationary computer device. ADVANTAGE - The vertical nonvolatile memory device in which a thickness of one memory cell is reduced to reduce a total thickness of a memory cell string and to increase the number of stacked memory cells. During an erase operation, a tunneling current is decreased where the efficiency of the erase operation is improved. The metal-doped graphene has a high work function and the performance of the vertical nonvolatile memory device is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a structure of a respective memory cell string. 301Substrate 311Insulating spacer 312Gate electrode 315Channel layer 320Gate insulating layer