▎ 摘　　要

NOVELTY - Forming graphene-based memory device (100) involves forming first graphene layer (101) on insulator layer; forming second insulation layer (103) on first graphene layer; forming second graphene layer (102) on second insulation layer; and forming opening (104) in second insulation layer to expose portion of first and second graphene layers and to suspend exposed portion of second graphene layer in opening, where opening has depth and width such that second layer is configured to bend into opening to contact the first layer based on electrostatic force being applied to second layer. USE - For forming a graphene-based memory device (claimed) e.g. flash memory, optical disks, such as compact disks (CDs) and digital versatile disks (DVDs), and magnetic computer storage devices such as hard disks, floppy disks, and magnetic tape. ADVANTAGE - Using the method, non-volatile memory can be formed of two graphene layers programmable by an electrostatic charge to hold program information even when no power is supplied to the memory. The graphene-based non-volatile memory device does not require power to maintain programmed information. The memory device is a non-volatile memory device that holds its state even when no power is supplied to the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for forming a graphene-based memory circuit involving forming a graphene-based memory device including first and second graphene layers and a back gate, the first graphene layer bendable with respect to the second graphene layer to selectively contact the second graphene layer based on a voltage level of the backgate; forming a word line connected to the back-gate; forming a bit line connected to the first graphene layer; and forming a read line connected to the second graphene layer. DESCRIPTION OF DRAWING(S) - The figure shows a view of memory device. Memory device (100) First graphene layer (101) Second graphene layer (102) Second insulation layer (103) Opening. (104)