▎ 摘　　要

NOVELTY - The structure has a substrate (302) including a patterned insulating layer (605) formed on it. A metal portion (402A) is disposed within the patterned insulating layer. A graphene layer (902) is disposed along a lateral sidewall of the metal portion. The graphene layer defines a vertical plane perpendicular to a horizontal plane defined by the substrate. A nanobar (1002) is disposed on the graphene layer. The nanobar extends from the graphene layer and along a direction normal to the vertical plane and parallel to the horizontal plane. USE - Structure for providing a Gate-All-Around (GAA) device. Uses include but are not limited to an intermediate devices fabricated during processing of an integrated circuit, that may comprise static random access memory (SRAM) and/or other logic circuits, passive components such as resistors, capacitors, and inductors, and active components such as P-channel field-effect transistors (PFETs), N-channel FETs (NFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, bipolar transistors, high voltage transistors, high frequency transistors, other memory cells, and/or their combinations. ADVANTAGE - A simple and inexpensive way to provide nanobars, disposed in a direction that is free from substrate orientation, is provided which overcomes significant shortcomings of at least some current techniques. An end portion of the nanobar extends into the cavity or bar-supporting hole, thus providing structural support to the nanobar. DESCRIPTION OF DRAWING(S) - The drawing illustrates a cross-sectional view of a GAA device, where nanobar growth proceeds according to a one-sided nanobar growth process. Substrate (302) Metal portion (402A) Insulating layer (605) Graphene layer (902) Nanobar (1002)