▎ 摘　　要

NOVELTY - The device has a substrate, a two-dimensional semiconductor nanosheet, a two-dimensional hexagonal boron nitride nano sheet, a two-dimensional graphene sheet and a two-dimensional ferroelectric nano. The two-dimensional semiconductor nano sheet, two-dimensional hexagonal boron nitride nano sheet. The covering area of the two-dimensional graphene nano sheet and the two-dimensional ferroelectric nano sheet is not more than the area of each lower layer. One end of the two-dimensional graphene sheet covers the two-dimensional semiconductor nano sheet and the other end extends and covers on the substrate. A source end electrode and a drain end electrode are located at two ends of the two-dimensional semiconductor nano sheet. A middle gate electrode is set on one end of the two-dimensional graphene nano sheet covered on the substrate. The top gate electrode is set on the overlapping area of the two-dimensional nano sheet graphene the two-dimensional hexagonal boron nitride nano sheet. USE - Used as two-dimensional metal-ferroelectric-metal-insulator-semiconductor switch and memory device. ADVANTAGE - The switch and memory device solves the problem of background technology. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a two-dimensional metal-ferroelectric-metal-insulator-semiconductor switch and storage device. DESCRIPTION OF DRAWING(S) - The drawing shows a three-dimensional structure schematic diagram of the two-dimensional metal-ferroelectric-metal-insulator-semiconductor switch and memory device. 101Substrate 102Two-dimensional semiconductor nanosheet 103Two-dimensional hexagonal boron nitride nanosheet 104Graphene sheet nanometre sheet 105Two-dimensional ferroelectric nano-sheet 106Source electrode 107Drain electrode 108Intermediate gate electrode 109Top gate electrode