• 专利标题:   Graphene plasmon resonator used in semiconductor device manufacture, has graphene plasmon resonator pattern formed on substrate with Epsilion-Near-Zero (ENZ) properties to generate plasmon resonance when irradiated with infrared light.
  • 专利号:   KR2020061754-A
  • 发明人:   MINSEOKJANG, KIM S H
  • 专利权人:   KOREA ADVANCED SCI TECHNOLOGY INST
  • 国际专利分类:   G02B006/35, H01P001/203
  • 专利详细信息:   KR2020061754-A 03 Jun 2020 H01P-001/203 202055 Pages: 15
  • 申请详细信息:   KR2020061754-A KR147425 26 Nov 2018
  • 优先权号:   KR147425

▎ 摘  要

NOVELTY - The resonator (200) has a substrate (210) that has the properties of ENZ. A graphene plasmon resonator pattern (220) is formed on the substrate. The graphene plasmon resonator pattern generates a plasmon resonance when irradiated with infrared light. The scale of the size of the graphene plasmon resonator pattern is a sub-wavelength relative to the wavelength of the infrared light generating the plasmon resonance. USE - Graphene plasmon resonator used in semiconductor device manufacture. ADVANTAGE - Provides a graphene plasmon resonator that has a graphene plasmon resonator pattern formed on a substrate with ENZ characteristics, such that the graphene plasmon resonator with large size scale can be implemented. Ensures minimized performance degradation due to manufacturing variations. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene plasmon resonator manufacture method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene plasmon resonator. (Drawing includes non-English language text). Resonator (200) Substrate (210) Graphene plasmon resonator pattern (220)