▎ 摘　　要

NOVELTY - The semiconductor structure includes a semiconductor substrate (101) selected from the group consisting of a sapphire semiconductor substrate and a silicon semiconductor substrate. A multiple-porous graphene layer (102) is formed on the semiconductor substrate. A gallium nitride layer (103) is formed on the multiple-porous graphene layer. USE - Semiconductor structure having multiple-porous graphene layer for manufacture of various devices, such as LEDs, solar cells, and high-electron-mobility transistors. ADVANTAGE - By using multiple-porous graphene, the problem of lattice mismatch can be effectively reduced, and the thermal mismatch phenomenon between the gallium nitride and the semiconductor substrate can be eliminated. The multiple-porous graphene has very high thermal conductivity, except there is the advantage of easy heat dissipation, and the graphene can be extensively applied to the fields of LED, solar cell, and high-electron-mobility transistor (HEMT), etc. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fabrication method of a semiconductor structure having a multiple-porous graphene layer. DESCRIPTION OF DRAWING(S) - The drawing illustrates the cross-sectional diagram for a semiconductor structure having a multiple-porous graphene layer. Semiconductor substrate (101) Multiple-porous graphene layer (102) Gallium nitride layer (103)