▎ 摘　　要

NOVELTY - The IC structure has a substrate (52) having an IC device, and a first dielectric material layer (60) which is disposed on the substrate and formed with a first trench. A first composite interconnect feature is disposed in the first trench and is electrically coupled with the IC device. The first composite interconnect feature includes a first barrier layer (260) disposed on sidewalls of the trench, a first barrier layer disposed on sidewalls of the first trench, a first metal layer disposed on the first barrier layer, and a first graphene layer disposed on the metal layer. USE - IC structure for use in e.g. LED, complimentary metal-oxide-semiconductor field-effect transistor (CMOS-FET), imaging sensor. ADVANTAGE - Enhances the gap filling capability, especially for trenches with high aspect ratios by combining the metal layers and graphene layers. Enhances the overall conductivity and reliability of the semiconductor structure by using carbon nanotubes (CNTs) and graphene which are good conductive materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fabrication method of IC structure. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views of the semiconductor structure during various fabrication stages. Substrate (52) Conductive feature (54) First dielectric material layer (60) Etch stop layer (62) Second dielectric material layer (66) First barrier layer (260)