▎ 摘　　要

NOVELTY - A two-dimensional magnetic film heterojunction non-refrigeration infrared detector has a substrate insulation layer, a bottom reflecting electrode layer, a heterojunction including n-type two-dimensional layered material film and p-type two-dimensional layered material film on n-type two-dimensional layered material film, a top electrode layer arranged on one side or portion of region of p-type two-dimensional material above the p-n junction, and a transparent top-gate insulating layer. The heterojunction region overlaps and is in close contact with the bottom reflecting electrode layer. The transparent top-gate insulating layer is covered directly above the entire heterojunction device. The transparent top-gate insulating layer comprises high-dielectric materials, such as hafnium dioxide and poly(methyl methacrylate). The transparent top gate electrode is arranged directly above p-n junction and contains graphene and indium-tin oxide transparent materials. USE - Two-dimensional magnetic film heterojunction non-refrigeration infrared detector based on narrow band gap. ADVANTAGE - The photoelectric detector based on layered material heterojunction is simple in structure, and is efficient to use. DETAILED DESCRIPTION - A two-dimensional magnetic film heterojunction non-refrigeration infrared detector based on narrow band gap, has a structure on substrate from bottom to top, a substrate insulation layer, a bottom reflecting electrode layer arranged on substrate insulation layer, a heterojunction including n-type two-dimensional layered material film and p-type two-dimensional layered material film on the n-type two-dimensional layered material film, a top electrode layer arranged on one side or portion of region of p-type two-dimensional material above the p-n junction, and a transparent top-gate insulating layer. The two-dimensional layered heterojunction having thickness of 25 plus minus 10 nm is placed on the bottom electrode layer. The heterojunction region overlaps and is in close contact with the bottom reflecting electrode layer. The transparent top-gate insulating layer is covered directly above the entire heterojunction device. The transparent top-gate insulating layer comprises high-dielectric materials, such as hafnium dioxide and poly(methyl methacrylate). The transparent top gate electrode is arranged directly above p-n junction and contains graphene and indium-tin oxide transparent materials. An INDEPENDENT CLAIM is included for preparation of the infrared detector, which involves: (A) preparing p-type layered narrow band gap magnetic semiconductor material containing iron phosphorus triselenide, chromium silicon tritelluride and chromium germanium tritelluride, by mixing high-purity iron powder, high-purity selenium powder and high-purity red phosphorus in proportions; and (B) placing in high-temperature furnace for firing, where the firing process is carrying out after 6 hours, raising temperature to 750 degrees C, after 4 hours of heat preservation, reducing to 710 degrees C after 80 hours, and naturally cooling.