▎ 摘　　要

NOVELTY - The device has a gallium nitride substrate (1), a monolayer graphene layer (2), a gate electrode (3), a source electrode (4), a drain electrode (5), an applied gate bias voltage (6), and an applied source-drain voltage(7). The source electrode is connected with one end of the monolayer graphene layer, and the drain electrode is connected with the other end of the monolayer graphene layer. The monolayer graphene layer is connected above the gallium nitride substrate, and the gate is connected below the gallium nitride substrate. The applied gate bias voltage is a voltage applied between the source electrode and the gate electrode. The applied source-drain voltage is the voltage applied between the source electrode and the drain electrode. USE - Device for controlling extension and remote epitaxial growth mode of van der Wales ear. ADVANTAGE - The problem that the substrate needs to be manufactured many times in the production process due to the different thicknesses of graphene required by the two epitaxial modes are avoided. The high-quality GaN materials are produced, and significant time and manufacturing costs are saved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for controlling extension and remote epitaxial growth mode of van der Wales ear. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the device for controlling extension and remote epitaxial growth mode of van der Wales ear. Gallium nitride substrate (1) Monolayer graphene layer (2) Gate electrode (3) Source electrode (4) Drain electrode (5) Applied gate bias voltage (6) Applied source and drain voltage (7)