▎ 摘　　要

NOVELTY - Formation of graphene film on a nickel substrate involves surface-treating nickel foil, placing nickel foil in a vacuum heating furnace, heating, aerating with argon and hydrogen, growing graphene at 900-1000 degrees C, forming a graphene film on the surface of the nickel foil, cooling to room temperature, forming a graphene film/nickel foil substrate composite, etching, forming a layer of polymethylmethacrylate, washing, processing with lateral electric field and magnetic field, washing, placing on a required substrate, and cleaning with acetone and deionized water. USE - Formation of graphene film on nickel substrate (claimed). ADVANTAGE - The graphene film of high quality is formed on nickel substrate by simple method without affecting the environment. DETAILED DESCRIPTION - Formation of graphene film on a nickel substrate involves surface-treating nickel foil having thickness of 0.03 mm and purity of 99.99% with 0.2 mol/L surface treatment solution, ultrasonically treating for 10 minutes or more at room temperature, washing with water and ethanol, blow-drying with nitrogen, placing nickel foil in a vacuum heating furnace, heating, aerating with argon and hydrogen at heating rate of 8 degrees C/minute, growing graphene at 900-1000 degrees C, introducing methane, setting flow rate of argon, hydrogen and methane to 300 sccm, 50 sccm and 8 sccm, respectively, maintaining vacuum at 10-2 Pa, forming a graphene film on the surface of the nickel foil at controlled cooling rate of 8-10 degrees C/minutes, cooling to room temperature, forming a graphene film/nickel foil substrate composite, etching, forming a layer of polymethylmethacrylate, washing with deionized water, processing with lateral electric field and magnetic field, washing with mixed liquid of hydrogen peroxide and hydrochloric acid, further washing with mixed liquid of hydrogen peroxide and ammonia, removing the composite, placing on a required substrate, and cleaning with acetone and deionized water.