▎ 摘　　要

NOVELTY - A metal substrate is ultrasonically cleaned, dried, placed in chemical vapor deposition apparatus, and evacuated. Resultant metal substrate is heated, and reducing gas and carbon source gas are introduced. The chamber pressure is maintained, to remove oxide layer of metal substrate. Temperature of metal substrate is maintained and reaction chamber pressure is maintained, and growing process is carried out. Resultant metal substrate is cooled, and reaction chamber pressure is maintained to obtain double-layer graphene. USE - Chemical vapor deposition method for preparing dual-layer graphene (claimed). ADVANTAGE - The method efficiently and economically forms dual-layer graphene without affecting the environment, by simple method with high productivity. DETAILED DESCRIPTION - A metal substrate is ultrasonically cleaned using deionized water, acetone and ethanol, dried, placed in the heating zone of chemical vapor deposition (CVD) apparatus, and evacuated to the pressure of 1 m Torr. The resultant metal substrate is heated to 500-1000 degrees C for 10-60 minutes, and reducing gas and carbon source gas are introduced at the flow rate of 0.5-1000 sccm and 5-1000 sccm, respectively. The CVD reaction chamber pressure is maintained under 0.01-100 Torr, to remove the oxide layer of metal substrate. The temperature of the metal substrate is maintained at 500-1000 degrees C and reaction chamber pressure is maintained at 0.1-100 Torr, and growing process is carried out for 10-600 minutes. The resultant metal substrate is cooled to 400-600 degrees C for 10-400 minutes, and the reaction chamber pressure is maintained under pressure of 0.1-100 Torr. The flow rate of oxygen gas and inert gas is controlled respectively to 0.5-100 Torr and 0.1-100 torr to obtain double-layer graphene.