▎ 摘　　要

NOVELTY - The transparent electrode (200) is composed of graphene layer (220) that is arranged in inner side of metal oxide semiconductor layer (210) in patterned form. The graphene layer and metal oxide semiconductor layer are laminated with each other. The metal oxide semiconductor layer is made of zinc, titanium, indium, gallium, and tin. USE - Transparent electrode of semiconductor light emitting device. ADVANTAGE - The thermal process of manufacturing the semiconductor light emitting device is improved, and the electrical characteristic of light emitting device is also improved effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing semiconductor light emitting device arranged with transparent electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the transparent electrode. Transparent electrode (200) Metal oxide semiconductor layer (210) Graphene layer (220) Conductive semiconductor layer (310) Active layer (320)