▎ 摘　　要

NOVELTY - The method involves providing a substrate (100) with an epitaxial growth surface. A main epitaxial layer (110) is epitaxially grown on the epitaxial growth surface of the substrate. A graphene layer (120) is formed on the main epitaxial layer. A sub epitaxial layer (130) is epitaxially grown on the main epitaxial layer. The graphene layer is provided with the graphene powders or a graphene film. USE - Method for manufacturing epitaxial structure used in semiconductor device e.g. light emitting device e.g. light emitting diode (LED) mounted in electronic device. ADVANTAGE - The manufacturing cost of epitaxial structure can be reduced, since formation process of patterned graphene layer on substrate is simplified. The occurrence of pollution on substrate can be prevented. The apertures can be dispersed uniformly on the graphene layer. The size, thickness and shape of substrate can be selected easily according to requirement of manufacturer. The drawn carbon nanotube film can be attached directly to the epitaxial growth surface of substrate. The size of apertures defined between patterned graphene layers can be controlled effectively by selecting diameter of the carbon nanotube. The thickness of carbon nanotube film can be reduced. The desired length of untwisted carbon nanotube wire can be set arbitrarily. The quality of epitaxial layers can be improved, since graphene layer is arranged between substrate and the epitaxial layer. The contact surface between epitaxial layer and substrate can be reduced. The occurrence of stress between epitaxial layer and substrate can be reduced. The operating efficiency of electronic device can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the epitaxial structure. Epitaxial structure (30) Substrate (100) Main epitaxial layer (110) Graphene layer (120) Sub epitaxial layer (130)