▎ 摘　　要

NOVELTY - The method involves applying ethylene and silicon rubber materials into a carbon source and a silicon source. The silicon rubber materials are coated on a transition metal substrate and a vacuum reaction system. Oxygen gas is removed by an inner cavity under a low vacuum condition. A vacuum degree of the vacuum reaction system is maintained up to 1-500Pa. Carbon source gas is injected into a vacuum chamber through a hydrogen injecting vacuum cavity. Flow rate of hydrogen is maintained. Heat preservation speed and cooling speed are measured. Flow rate of the ethylene is determined. USE - Silicon carbide graphene thin film manufacturing method. ADVANTAGE - The method enables ensuring simple process, low occupying space, very smooth preparation of a graphene thin film, easy controllable, better graphene-containing preparation efficiency and tightly combined functional group of a base body. DETAILED DESCRIPTION - The silicon rubber material is made of a powder material. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram illustrating a silicon carbide graphene thin film manufacturing method. '(Drawing includes non-English language text)'