• 专利标题:   Substrate used to produce graphene film, comprises stack of self-supporting base, electrically insulating layer and catalyst layer with self-supporting base having basic monocrystalline area, in succession and superimposed on each other.
  • 专利号:   EP3340282-A1, FR3061356-A1
  • 发明人:   GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G
  • 专利权人:   COMMISSARIAT ENERGIE ATOMIQUE
  • 国际专利分类:   H01L021/20, H01L023/14, H01L021/36, C01B032/186, C01B032/188
  • 专利详细信息:   EP3340282-A1 27 Jun 2018 H01L-021/20 201848 Pages: 15 French
  • 申请详细信息:   EP3340282-A1 EP209131 20 Dec 2017
  • 优先权号:   FR063203

▎ 摘  要

NOVELTY - Substrate (5) comprises a stack (10) comprising a self-supporting base (15), an electrically insulating layer (20) and a catalyst layer (25) with the self-supporting base having a basic monocrystalline area, in succession and superimposed on each other. The catalyst layer has a monocrystalline catalyst zone containing more than 99.9 mass% of a transition metal including iron, cobalt, nickel, copper, ruthenium, iridium, platinum, gold, palladium or rhodium or its alloy. The electrically insulating layer has an electrically insulating monocrystalline zone containing more than 99.9 mass% of an oxide having a dielectric constant of greater than 4, where the electrically insulating monocrystalline zone is epitaxied with the monocrystalline catalysis zone and with the basic monocrystalline zone. USE - The substrate is useful for depositing or producing a graphene film (claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing (M1) the substrate, comprising (a) providing a self-supporting base comprising basic monocrystalline zone, (b) forming an electrically insulating monocrystalline zone by epitaxially growing and in contact with the monocrystalline base zone, and (c) forming monocrystalline zone of catalysis by epitaxial growth, and in contact with the electrically insulating monocrystalline zone, where the constituents of the basic monocrystalline zone, the electrically insulating monocrystalline zone and the monocrystalline catalysis zone are chosen so as to form the substrate; and (2) producing (M2) a graphene film, comprising providing the substrate or manufactured or capable of being manufactured by method (M1) and forming a graphene film by epitaxial deposition in contact with the monocrystalline zone of catalysis of the substrate, preferably by means of a chemical vapor deposition device. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of substrate. Substrate (5) Stack (10) Self-supporting base (15) Electrically insulating layer (20) Catalyst layer (25)