• 专利标题:   N-type CdSxSe1-x/graphene Schottky thin film solar energy battery, has insulation layer arranged with front electrode, and thin film layer that is made of n-type CdSxSe1-x semiconductor thin film.
  • 专利号:   CN104952961-A, CN104952961-B
  • 发明人:   HAN Z, QIAN B, ZHANG L, GU S
  • 专利权人:   CHANGSHU INST TECHNOLOGY
  • 国际专利分类:   H01L031/0296, H01L031/07
  • 专利详细信息:   CN104952961-A 30 Sep 2015 H01L-031/07 201576 Pages: 5 Chinese
  • 申请详细信息:   CN104952961-A CN10338445 18 Jun 2015
  • 优先权号:   CN10338445

▎ 摘  要

NOVELTY - The battery has an overlapped substrate (1), a back electrode (2), a semi-conductor thin film layer (3), an insulation layer (4), a front electrode (5) and graphite alkene (6). The insulation layer is arranged with the front electrode. The graphite alkene is arranged with a semiconductor thin film layer whose surface contact is made with a Schottky junction. The semiconductor thin film layer is made of n-type CdSxSe1-x semiconductor thin film, where x is greater than 0.2 and less than 0.6. USE - N-type CdSxSe1-x/graphene Schottky thin film solar energy battery. ADVANTAGE - The battery is easy to operate, and improves power generation efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of an N-type cdsxse1-x/graphene schottky thin film solar energy battery. Overlapped substrate (1) Back electrode (2) Semi-conductor thin film layer (3) Insulation layer (4) Front electrode (5) Graphite alkene (6)