• 专利标题:   Multi-layer graphene structure preparation involves spin coating polymethyl methacrylate film, using chemical corrosion liquid for layer etching, and adhering target graphene to new substrate.
  • 专利号:   CN104029431-A, CN104029431-B
  • 发明人:   CHEN X, LIU Z, TIAN J
  • 专利权人:   UNIV NANKAI, UNIV NANKAI
  • 国际专利分类:   B32B009/00, C01B031/04, C01B032/194
  • 专利详细信息:   CN104029431-A 10 Sep 2014 B32B-009/00 201480 Pages: 6 Chinese
  • 申请详细信息:   CN104029431-A CN10289213 23 Jun 2014
  • 优先权号:   CN10289213

▎ 摘  要

NOVELTY - A multi-layer graphene structure with controllable distortion angle is prepared by cutting silicon dioxide/silicon substrate of single layer graphene single crystal into 2 parts; spin coating polymethyl methacrylate (PMMA) film along cutting line; using chemical corrosion liquid for layer etching; adhering target graphene with PMMA layer and transferring to new substrate; and rotating the substrate on micro-operation system, and stacking together. USE - Method for preparing multi-layer graphene structure with controllable distortion angle (claimed). DETAILED DESCRIPTION - Preparing multi-layer graphene structure with controllable distortion angle comprises (A) cutting silicon dioxide/silicon (SiO2/Si) substrate of single layer graphene single crystal into 2 parts; (B) spin coating PMMA film along cutting line; (C) using chemical corrosion liquid for layer etching; (D) adhering target graphene with PMMA layer and transferring to new substrate, washing the PMMA with acetone, and attaching the other part into a glass sheet; (E) rotating the substrate on micro-operation system, and stacking together; (F) using acetone for washing PMMA; and (G) retaining selected distortion double-layer graphite alkene.