▎ 摘　　要

NOVELTY - Preparing single-walled carbon nano-tube comprises: (i) orderly and ultrasonically cleaning growth substrate in ultra-pure water, acetone, ethanol and ultra-pure water, blow-drying by using high-purity nitrogen, placing cleaned substrate into muffle furnace, heating to 900 degrees C for 2 hours, annealing in air at 900 degrees C for 8 hours, cooling to 300 degrees C for 10 hours, cooling to room temperature; (ii) mechanically stripping catalyst i.e. graphene on processed growth substrate, where layer number is 1-10 layer; (iii) growing carbon nano-tube on substrate deposited with graphene, and introducing hydrogen and carbon source into chemical vapor deposition system for growth of single-walled carbon nano-tube; and (iv) obtaining full-carbon heterojunction finished product. USE - The method is useful for preparing single-walled carbon nano-tube, which is useful for preparing field-effect transistor device with stable performance. ADVANTAGE - The single-walled carbon nano-tube process does not contain metal.