▎ 摘　　要

NOVELTY - The method involves forming a silicon layer on a back gate graphene FET device. Voltages of drain and source electrodes are determined. Electric current of the drain electrode is determined. The graphene FET device is fixed on a silicon substrate. A transfer characteristic curve is drawn. An instant breakdown characteristic curve of the graphene FET device is drawn when voltage of the source electrode is gradually increased from zero to 10 V. The silicon substrate is fixed with the source electrode through electric current of the drain electrode. USE - Back gate graphene FET device failure determining method. ADVANTAGE - The method enables determining device breakdown operation in a simple and convenient manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a back gate graphene FET device failure determining method.