▎ 摘　　要

NOVELTY - The method involves forming a source drain metal layer with an oxide semiconductor active layer. A graphene layer is adhered with the oxide semiconductor active layer. A source electrode and a drain electrode are formed on the graphene layer by a composition technology. Ash is removed between the source electrode and the drain electrode. The source electrode and the drain electrode are formed between two graphene retain layers. A substrate material layer is made of germanium material. A source leakage metal film layer is made of elemental copper, copper alloy and elemental gold materials. USE - Method for manufacturing a thin film transistor of an array substrate of a display device (all claimed). ADVANTAGE - The method enables reducing patterning process time. The method enables preventing the source and drain electrodes from being influenced during oxide semiconductor active layer etching process in an effective manner. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a thin film transistor (2) an array substrate manufacturing method (3) an array substrate (4) a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing thin film transistor of array substrate of display device.'(Drawing includes non-English language text)'