• 专利标题:   Transistor, comprises channel that comprises two-dimensional material adjacent to seed material, channel oriented perpendicular to base material, gate dielectric adjacent to two-dimensional material, and gates adjacent to gate dielectric.
  • 专利号:   US2021408297-A1
  • 发明人:   SMYTHE J A, SANDHU G S, KULA W
  • 专利权人:   MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L029/66, H01L021/02, H01L027/105, H01L029/24, H01L029/786
  • 专利详细信息:   US2021408297-A1 30 Dec 2021 H01L-029/786 202208 English
  • 申请详细信息:   US2021408297-A1 US447393 10 Sep 2021
  • 优先权号:   US113113, US447393

▎ 摘  要

NOVELTY - Transistor comprises a channel that comprises a two-dimensional material adjacent to a seed material, the channel oriented perpendicular to a base material, a gate dielectric adjacent to the two-dimensional material, and gates adjacent to the gate dielectric. USE - Transistor. ADVANTAGE - The transistor improves crystalline quality. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a memory cell which comprises transistors, in which transistors comprises: i. an L-shaped channel comprising a two-dimensional material; ii. an insulative material and a gate dielectric adjacent to the L-shaped channel; iii. a gate adjacent to the gate dielectric and capacitor in operative communication with the transistor; (2) a semiconductor device which comprises an array of memory cells, in which memory cells comprises: a. transistors comprising L-shaped portions of a two-dimensional material exhibiting a width of from about one monolayer of atoms to about three monolayers of atoms; b. dielectric material separating the L-shaped portions of the two-dimensional material; c. gate dielectric laterally adjacent to the L-shaped portions of the two-dimensional material; d. gates adjacent to the gate dielectric; and e. capacitors in operative communication with the transistors.