▎ 摘　　要

NOVELTY - The memory has a substrate formed as a gate layer. An insulating layer is covered on the gate layer, where multiple floating gate layers are formed on the insulatinglayer. The floating gate layer is provided with a spacer region. A barrier layer is fixed on the floating gate levels. A channel layer is formed on a barrier layer. A source electrode or a drain electrode is fixed between two adjacent drain electrodes. The channel layer corresponding to each of the spacer regions is provided corresponding to the source electrode and the drain electrode. The source electrode is provided between the drain electrodes between the adjacent drain electrode between the two adjacent the source electrodes. An electron tunneling stored in the floating gate layer in the allowed state is returned to the channel layer to realize the release of electrons in the floatable gate layer under the condition of applying a release bias. USE - Two-dimensional material heterojunction floating gate memory i.e. NAND Flash (Computer multimedia application) memory for use in an integrated circuit industry for development of modern information society. ADVANTAGE - The two-dimensional material heterojunction floating gate memory has fast and low power consumption, and multi-level storage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the floating gate memory. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a two-dimensional material heterojunction floating gate memory for use in integrated circuit industry. Insulating layer (101)