▎ 摘　　要

NOVELTY - The method involves coating a transition metal substrate with photo-resist, and transferring a photo-resist pattern to a photo-resist layer. The photo-resist layer is utilized as a mask, and carbon ion implantation is performed in the transition metal substrate to form a carbon ion implantation region. The photo-resist layer is removed, and thermal annealing treatment is performed. A single dimensional scale with width close to less than 10 nanometeres is provided on a surface of the transition metal substrate, and limited graphene nanometer belt is obtained. USE - Method for preparing a graphene nanometer belt. ADVANTAGE - The method enables performing carbon ion implantation in a specific angle of ion implantation for preparing graphene nanometer belt with accurate and simple technique and high yield. DETAILED DESCRIPTION - The metal in the transition metal substrate is nickel, ruthenium, iridium, platinum, cobalt or alloy. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a graphene nanometer belt.'(Drawing includes non-English language text)'