• 专利标题:   MEMS piezoresistive pressure sensor in pressure detecting device, has insulation layer which is etched out to form cavity and cavity is covered by thin film of silicon graphene and antioxidant protective layer is formed on thin film.
  • 专利号:   CN105841852-A, CN105841852-B
  • 发明人:   WANG X, ZHAN S
  • 专利权人:   UNIV HUAZHONG SCI TECHNOLOGY, UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   G01L001/18, G01L009/06
  • 专利详细信息:   CN105841852-A 10 Aug 2016 G01L-001/18 201677 Pages: 13 Chinese
  • 申请详细信息:   CN105841852-A CN10371195 30 May 2016
  • 优先权号:   CN10371195

▎ 摘  要

NOVELTY - The sensor has a comprising substrate (1) over which an insulation layer (2) is formed. A portion of insulation layer is etched out to form a cavity. The cavity is covered or closed by thin film (4) of silicon graphene. An antioxidant protective layer (5) is formed on the thin film and the anti-oxidation protective layer edge has two metal electrodes. The two metal electrodes (6) are respectively connected with the conducting wires. USE - Micro-electro-mechanical systems (MEMS) piezoresistive pressure sensor used in pressure detecting device such as biochemical devices to measure pressure inside cardiovascular, intracranial, urethra, and uterus. ADVANTAGE - The manufacturing process is simple, the sensitivity and the reliability are high and the application is more extensive. The manufacturing process is compatible. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of manufacturing MEMS piezoresistive pressure sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a three dimensional view of MEMS piezoresistive pressure sensor. Substrate (1) Insulation layer (2) Thin film of silicon graphene (4) Anti-oxidation protective layer (5) Metal electrodE (6)