• 专利标题:   Selenium doped graphene electrode, has main body fixed to electric conduction layer, upper insulation substrate made of glass, and tin dioxide doped with fluorine and its thickness is in specified range.
  • 专利号:   CN105140038-A, CN105140038-B
  • 发明人:   QIU J, YU C, MENG X
  • 专利权人:   UNIV DALIAN TECHNOLOGY, UNIV DALIAN TECHNOLOGY
  • 国际专利分类:   H01G009/042, H01G009/20, H01L051/42, H01L051/44, H01L051/48, H01M014/00
  • 专利详细信息:   CN105140038-A 09 Dec 2015 H01G-009/042 201603 Pages: 10 English
  • 申请详细信息:   CN105140038-A CN10589631 16 Sep 2015
  • 优先权号:   CN10589631

▎ 摘  要

NOVELTY - The electrode has an insulation substrate provided with an electric conduction layer and a selenium doped graphene. The electric conduction layer is formed by a physical deposition method on the insulation substrate. A main body is fixed to the electric conduction layer. An upper insulation substrate is made of glass. Thickness of the electric conduction layer is 18-22 mm. A tin dioxide is doped with fluorine and its thickness is 0.2-0.5 mm. USE - Selenium doped graphene electrode. ADVANTAGE - The electrode has simple structure, high cost and poor stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a selenium doped graphene electrode preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a selenium doped graphene electrode.