▎ 摘　　要

NOVELTY - Field effect transistor (100) has a source electrode (180) and a drain electrode (190) on a substrate (110) and apart from each other in a direction. A set of channel layers (121,122) is provided on the substrate, where each of the channel layers has ends contacting the source and drain electrodes. The channel layers are spaced apart in another direction away from the substrate. A gate insulating film surrounds each channel layer, and a gate electrode surrounds the film. Each channel layer has two edges extending in a third direction perpendicular to the former direction and the latter direction, where the edges respectively contact the electrodes. The two dimensional semiconductor material comprises graphene, black phosphorus, phosphorene or a transition metal dichalcogenide. The transition metal dichalcogenide comprises metal element and chalcogen element. USE - The field effect transistor is useful in various integrated circuit devices including memory, driving integrated circuit, and logic device. ADVANTAGE - The short channel effect is limited and the channel length is effectively reduced. The space occupied by a transistor provided in the integrated circuit device is drastically reduced to increase the integration of an integrated circuit (IC) device. The size of a transistor is reduced while maintaining performance has been conducted. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a schematic structure of the field effect transistor. Field effect transistor (100) Substrate (110) Channel layers (121,122) Source electrode (180) Drain electrode (190)