▎ 摘　　要

NOVELTY - Preparing quantum resistance chip based on graphene, involves (a) providing a silicon carbide substrate, (b) annealing the silicon carbide substrate, (c) performing epitaxial growth on the surface of the annealed silicon carbide substrate by using a chemical vapor deposition method by using silicon ethane as a gas catalyst and acetylene as a carbon source to obtain single-layer graphene covering the silicon carbide substrate, (d) forming a patterned electrical contact layer on the single-layer graphene, (e) patterning the single-layer graphene to obtain a graphene structure, where the graphene structure is in contact with the electrical contact layer, (f) forming a patterned bonding electrode layer on the electric contact layer, where the bonding electrode layer is electrically connected with the electric contact layer, and (g) carrying out carrier concentration regulation and control on the graphene structure and packaging the graphene structure. USE - Method for preparing quantum resistance chip based on graphene. ADVANTAGE - The method provides hall resistance measurement accuracy reaches 1.2×10-8, while the relative uncertainty reaches 3×10-8, and the reproducibility reaches 3×10-9, the magneto transport properties are highly stable within half a year. The quantum resistance chip has miniaturization, high integration, cost optimization, high economic benefits, and strong applicability. The quantum resistance chip is directly integrated into a portable quantum resistance standard measurement system, which is conducive to promoting the further development of the precision measurement industry.