▎ 摘　　要

NOVELTY - The method comprises annealing the copper base alloy substrate, introducing carbon source to graphene the growth after the annealing, dividing graphene growth process into three stages according to the different hydrogen-carbon ratios, maintaining a certain time with (80-10000): 1 of high hydrogen-carbon ratio atmosphere, making the graphene not formed on the surface of the copper-based alloy substrate, ensuring enough carbon source to uniformly dissolve the copper-based alloy substrate, reducing the hydrogen-to-carbon ratio in the atmosphere to less than 80:1 compared to the first stage, maintaining for a certain time of time to rapidly form single-layer graphene on the surface of the copper-based alloy substrate, reducing hydrogen and carbon source concentration at the same time compared with the second stage, and cooling, realizing multi-layer graphene, quickly cooling to room temperature, ending the growth. USE - Method for improving multi-layer graphene coverage rate on copper-based alloy substrate used in optoelectronic field. Can also be used in electronic applications. ADVANTAGE - The method: has high repeatability, simple and easy operation; can improve the coverage rate of the multilayer graphene on the copper-nickel substrate; improves the layer number uniformity of the multi-layer graphene on copper-based alloy substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for improving multi-layer graphene coverage rate on copper-based alloy substrate (Drawing includes non-English language text).