1. 平台首页
  2. 国际专利信息
  • 专利标题:   Method of doping graphene thin film transistor and nanotube field effect transistor unit, involves selectively introducing dopant on metal contact portion of graphene thin film transistor and nanotube field effect transistor unit.
  • 专利号:   DE102012220731-A1, GB2497175-A, US2013134391-A1, GB2497175-B, US8895417-B2, DE102012220731-B4
  • 发明人:   AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, XIA F
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   B82Y099/00, H01L021/335, H01L029/786, H01L051/00, H01L051/05, H01L021/28, H01L029/772, H01L021/02, H01L021/04, B82Y010/00, H01L029/16
  • 专利详细信息:   DE102012220731-A1 29 May 2013 H01L-029/786 201337 Pages: 21 German
  • 申请详细信息:   DE102012220731-A1 DE10220731 14 Nov 2012
  • 优先权号:   US306276

▎ 摘　　要

NOVELTY - Method of doping graphene thin film transistor and nanotube field effect transistor unit, involves selectively introducing dopant on metal contact portion of graphene thin film transistor and nanotube field effect transistor unit for reducing contact resistance with metal electrode. USE - Method of doping graphene thin film transistor and nanotube field effect transistor unit (claimed). ADVANTAGE - The reduction of contact resistance is enabled by increase of charge carrier concentration of metal nanocarbon tubes/graphene boundary phase, during doping method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for doping graphene thin film transistor and nanotube field effect transistor unit. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view excellent manufacture of field effect transistor. Gate (100) Gate dielectric (120) Nano component (140)